Spectral blue shift of photoluminescence in strained‐layer Si1−xGex/Si quantum well structures grown by gas‐source Si molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.107770
Reference14 articles.
1. Near-band-gap photoluminescence of Si-Ge alloys
2. Isoelectronic bound exciton emission from Si‐rich silicon‐germanium alloys
3. Intense photoluminescence between 1.3 and 1.8 μm from strained Si1−xGexalloys
4. Near‐band‐gap photoluminescence of Si1−xGexalloys grown on Si(100) by molecular beam epitaxy
5. Electroluminescence and photoluminescence from Si1−xGexalloys
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