Author:
Lanza M.,Bersuker G.,Porti M.,Miranda E.,Nafría M.,Aymerich X.
Subject
Physics and Astronomy (miscellaneous)
Reference24 articles.
1. Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges
2. Oxide Double-Layer Nanocrossbar for Ultrahigh-Density Bipolar Resistive Memory
3. Identification of a determining parameter for resistive switching of TiO2 thin films
4. Electrical current distribution across a metal–insulator–metal structure during bistable switching
5. I. G. Baek, M. S. Lee, S. Seo, M. J. Lee, D. H. Seo, D. S. Suh, J. C. Park, S. O. Park, H. S. Kim, I. K. Yoo, U. I. Chung, and J. T. Moon, in Technical Digest—International Electron Devices Meeting (IEEE, 2004), p. 587.
Cited by
153 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献