Oxide Double-Layer Nanocrossbar for Ultrahigh-Density Bipolar Resistive Memory-Reference-Cited by-同舟云学术

Oxide Double-Layer Nanocrossbar for Ultrahigh-Density Bipolar Resistive Memory

Published:2011-08-02 Issue:35 Volume:23 Page:4063-4067
ISSN:0935-9648
Container-title:Advanced Materials
language:en
Short-container-title:Adv. Mater.

Author:

Chang Seo Hyoung,Lee Shin Buhm,Jeon Dae Young,Park So Jung,Kim Gyu Tae,Yang Sang Mo,Chae Seung Chul,Yoo Hyang Keun,Kang Bo Soo,Lee Myoung-Jae,Noh Tae Won

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/adma.201102395/fullpdf

Reference28 articles.

1. International Technology Roadmap for Semiconductors http://www.itrs.net

2. Thin Film Metal-Oxides

3. A Low-Temperature-Grown Oxide Diode as a New Switch Element for High-Density, Nonvolatile Memories

4. Two Series Oxide Resistors Applicable to High Speed and High Density Nonvolatile Memory

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