Theory of near-interface trap quenching by impurities in SiC-based metal-oxide-semiconductor devices
Author:
Funder
National Science Foundation
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4798536
Reference27 articles.
1. Effect of nitric oxide annealing on the interface trap densities near the band edges in the 4H polytype of silicon carbide
2. Physical properties of N2O and NO-nitrided gate oxides grown on 4H SiC
3. Mechanisms responsible for improvement of 4H–SiC/SiO2 interface properties by nitridation
4. Density of interface states, electron traps, and hole traps as a function of the nitrogen density in SiO2 on SiC
5. Phosphorous passivation of the SiO2/4H–SiC interface
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1. Boron and barium incorporation at the 4H-SiC/SiO2 interface using a laser multi-charged ion source;Journal of Materials Science: Materials in Electronics;2021-05-17
2. Defects and Passivation Mechanism of the Suboxide Layers at SiO₂/4H-SiC (0001) Interface: A First-Principles Calculation;IEEE Transactions on Electron Devices;2021-01
3. Direct Measurement of Active Near-Interface Traps in the Strong-Accumulation Region of 4H-SiC MOS Capacitors;IEEE Journal of the Electron Devices Society;2018
4. Temperature-controlled synthesis, thermodynamics and field emission properties of β-SiC/SiO2 coaxial heterojunction emitters;RSC Advances;2016
5. Silicon carbide: A unique platform for metal-oxide-semiconductor physics;Applied Physics Reviews;2015-06
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