Increased carrier lifetimes in GaN epitaxial films grown using SiN and TiN porous network layers
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1894583
Reference20 articles.
1. Nitride Semiconductors and Devices
2. Characteristics of free-standing hydride-vapor-phase-epitaxy-grown GaN with very low defect concentration
3. Fabrication of Freestanding GaN Wafers by Hydride Vapor-Phase Epitaxy with Void-Assisted Separation
4. Optimization of Si/N Treatment Time of Sapphire Surface and Its Effect on the MOVPE GaN Overlayers
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