Characteristics of free-standing hydride-vapor-phase-epitaxy-grown GaN with very low defect concentration
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1330563
Reference15 articles.
1. Progress and prospects of group-III nitride semiconductors
2. THE PREPARATION AND PROPERTIES OF VAPOR‐DEPOSITED SINGLE‐CRYSTAL‐LINE GaN
3. Growth of gallium nitride by hydride vapor-phase epitaxy
4. The Use of Metalorganics in the Preparation of Semiconductor Materials
5. Effects of hydrogen in an ambient on the crystal growth of GaN using Ga(CH3)3 and NH3
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