(-201) β-Gallium oxide substrate for high quality GaN materials
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Publisher
SPIE
Reference17 articles.
1. Electron mobility in single‐ and polycrystalline Ga2O3
2. Quasistatic and high frequency capacitance–voltage characterization of Ga2O3–GaAs structures fabricated by in situ molecular beam epitaxy
3. Synthesis and control of conductivity of ultraviolet transmitting β-Ga2O3 single crystals
4. Gallium oxide as an insulating barrier for spin-dependent tunneling junctions
5. High optical and structural quality of GaN epilayers grown on ( 2¯01) β-Ga2O3
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Study on the Size Effect of Single Crystal Gallium Oxide During the Nanoindentation Process;Journal of Advanced Manufacturing Systems;2021-05-28
2. Epitaxy of III-Nitrides on β-Ga2O3 and Its Vertical Structure LEDs;Micromachines;2019-05-13
3. Inductively coupled plasma reactive-ion etching of β-Ga2O3: Comprehensive investigation of plasma chemistry and temperature;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2017-07
4. Non-polar GaN film growth on (0 1 0) gallium oxide substrate by metal organic chemical vapor deposition;Journal of Materials Research;2017-04-17
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