Study on the Size Effect of Single Crystal Gallium Oxide During the Nanoindentation Process

Abstract

In order to accurately define the nanomechanical performance parameters of single crystal gallium oxide, the microscopic deformation mechanism during processing is analyzed. On the G200 nanoindenter, the Berkovich indenter made of diamond was used to perform nanoindentation experiments on single crystal gallium oxide (100) and (010) crystal planes by using a quasi-static method to set the load. According to the power law relationship and Nix-Gao model proposed by Manika, the relationship between the hardness of the two crystal faces of single crystal gallium oxide and the depth of indentation is fitted, and the single crystal gallium oxide (100) and (010) crystal faces without considering the size influence factor. The hardness is 8.238[Formula: see text]GPa and 9.824[Formula: see text]GPa, the micro feature length is 101.196[Formula: see text]nm and 88.033[Formula: see text]nm, and the size influence factor is 0.1725 and 0.1706, respectively. The size influencing factors of the two crystal planes are between common metal materials and semiconductor materials. Compared with the (010) crystal plane, the (100) plane exhibits a larger elastic modulus and lower hardness. (100) The indentation size effect of the crystal plane is more obvious.