The optical and electrical studies of hydrogen passivation in GaInP/GaAs heterostructures
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.123582
Reference17 articles.
1. Neutralization of Shallow Acceptor Levels in Silicon by Atomic Hydrogen
2. Electron mobility studies of the donor neutralization by atomic hydrogen in GaAs doped with silicon
3. Characterization of a-Si:H based metal/insulator/semiconductor structures by feedback charge capacitance-voltage measurements and charge deep-level transient spectroscopy
4. Study of microstructure of high stability hydrogenated amorphous silicon films by Raman scattering and infrared absorption spectroscopy
5. Hydrogen in crystalline semiconductors
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1. Influence of hydrogenation on surface morphologies, transport, and optical properties of InN epifilms;Journal of Applied Physics;2006-06-15
2. Interface-controlled Au/GaAs Schottky contact with surface sulfidation and interfacial hydrogenation;Journal of Applied Physics;2001-05
3. Investigation of Electrical and Optical Properties of Phosphine/Hydrogen-Plasma-Exposed In0.49Ga0.51P Grown on Si Substrate;Japanese Journal of Applied Physics;2001-03-01
4. Improvement of the MOCVD-grown InGaP-on-Si towards high-efficiency solar cell application;Solar Energy Materials and Solar Cells;2001-02
5. SURFACE AND INTERFACIAL RECOMBINATION IN SEMICONDUCTORS;Handbook of Surfaces and Interfaces of Materials;2001
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