Electron mobility studies of the donor neutralization by atomic hydrogen in GaAs doped with silicon
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.336764
Reference12 articles.
1. Deuterium passivation of grain‐boundary dangling bonds in silicon thin films
2. Deuterium at the Si‐SiO2 interface detected by secondary‐ion mass spectrometry
3. Hydrogen passivation of a bulk donor defect (Ec−0.36 eV) in GaAs
4. Passivation of the dominant deep level (EL2) in GaAs by hydrogen
5. Neutralization of Shallow Acceptor Levels in Silicon by Atomic Hydrogen
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