Study of microstructure of high stability hydrogenated amorphous silicon films by Raman scattering and infrared absorption spectroscopy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.121826
Reference20 articles.
1. Reversible conductivity changes in discharge‐produced amorphous Si
2. Very Stable a-Si:H Prepared by “Chemical Annealing”
3. Deposition of device quality, lowHcontent amorphous silicon
4. Growth of high quality amorphous silicon films with significantly improved stability
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