Characterization of a-Si:H based metal/insulator/semiconductor structures by feedback charge capacitance-voltage measurements and charge deep-level transient spectroscopy-Reference-Cited by-同舟云学术

Characterization of a-Si:H based metal/insulator/semiconductor structures by feedback charge capacitance-voltage measurements and charge deep-level transient spectroscopy

Published:1997-11 Issue:9 Volume:82 Page:4372-4377
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Thurzo I.,Teramura S.,Durny R.,Nádaždy V.,Kumeda M.,Shimizu T.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.366247

Reference10 articles.

1. Measurement of the density of gap states in hydrogenated amorphous silicon by space charge spectroscopy

2. Charge transient spectroscopy

3. Switching between deep‐level transient spectroscopy and feedback charge capacitance modes in a versatile time‐domain spectrometer

4. Transient distortion and nth order filtering in deep level transient spectroscopy (DnLTS)

5. Improved feedback charge method for quasistatic CV measurements in semiconductors

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