Improved copper detection in hydrofluoric acid by recombination lifetime measurements on dedicated silicon substrates
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1436272
Reference14 articles.
1. Electrical properties and recombination activity of copper, nickel and cobalt in silicon
2. Metallic Impurities Segregation at the Interface Between Si Wafer and Liquid during Wet Cleaning
3. Copper precipitation in long-time processed transistor samples
4. Breakdown in silicon oxides—correlation with Cu precipitates
5. Mechanism of Metallic Particle Growth and Metal‐Induced Pitting on Si Wafer Surface in Wet Chemical Processing
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1. Electrical Activity of Iron and Copper in Si, SiGe and Ge;Metal Impurities in Silicon- and Germanium-Based Technologies;2018
2. Chemical States of Copper Contaminants on SiO2 Surfaces and Their Removal by ppm-order HCN Aqueous Solutions;Journal of The Electrochemical Society;2011
3. Si cleaning method without surface morphology change by cyanide solutions;Applied Surface Science;2008-04
4. Complete Removal of Copper Contaminants on Bare Silicon Surfaces by Use of HCN Aqueous Solutions;Journal of The Electrochemical Society;2008
5. Reaction of cyanide ions with copper on Si surfaces and its use for Si cleaning;Surface Science;2006-03
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