Copper precipitation in long-time processed transistor samples-Reference-Cited by-同舟云学术

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Copper precipitation in long-time processed transistor samples

Published:1983 Issue:9 Volume:18 Page:1115-1123
ISSN:0232-1300
Container-title:Crystal Research and Technology
language:en
Short-container-title:Cryst. Res. Technol.

Author:

Gleichmann R.,Breitenstein O.,Mohr U.

Publisher

Wiley

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Reference6 articles.

1. : in: Electron microcopy in minerals, Ed. H.-R. Wenk, Berlin 1976

2. A capacitance meter of high absolute sensitivity suitable for scanning DLTS application

3. Precipitation of copper in silicon

4. Copper precipitation in long-time diffused silicon

5. , : Phys. stat. sol. (a), to be published

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Improved copper detection in hydrofluoric acid by recombination lifetime measurements on dedicated silicon substrates;Applied Physics Letters;2002-01-21

2. Electrical properties and recombination activity of copper, nickel and cobalt in silicon;Applied Physics A: Materials Science & Processing;1998-02-01

3. Precipitation of Copper in Transmutation Doped Silicon;MRS Proceedings;1983

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