HCl oxidation conditions for stacking‐fault nuclei gettering and for silicon etching
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.325148
Reference13 articles.
1. Defects in silicon substrates
2. Kinetics of Thermal Growth of HCl-0[sub 2] Oxides on Silicon
3. Properties of SiO2 Grown in the Presence of HCl or Cl2
4. Kinetics of the Thermal Oxidation of Silicon in O 2 / HCl Mixtures
5. Some Effects of “Trichloroethylene Oxidation” on the Characteristics of MOS Devices
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1. Halogens;Computational Microelectronics;2004
2. THERMAL OXIDATION OF SILICON AND Si-SiO2 INTERFACE MORPHOLOGY, STRUCTURE AND LOCALIZED STATES;Handbook of Surfaces and Interfaces of Materials;2001
3. Material and Electrical Properties of Gate Dielectrics Grown by Rapid Thermal Processing;MRS Proceedings;1985
4. Minority carrier lifetime improvement by HCl oxidation and argon ion implantation of silicon;Journal of Applied Physics;1983-07
5. Defekte in Halbleitern und Bauelementestrukturen;Elektronenmikroskopie in der Festkörperphysik;1982
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