Material and Electrical Properties of Gate Dielectrics Grown by Rapid Thermal Processing

Abstract

ABSTRACTThe material and electrical characteristics of silicon dielectric films prepared via Rapid Thermal Processing (RTP) are described. A commercial RTP system with heat provided by tungsten-halogen lamps was used. Silicon dioxide films were grown in pure oxygen and in oxygen with 4% hydrogen chloride ambients. As grown films were either annealed in a nitrogen ambient or nitrided in an ammonia ambient. Film thickness ranges from 4 to 70 nm for RTP times from 0 to 300 s at 1150 C. Current-voltage and capacitance-voltage methods were used for electrical characteristics. Ellipsometry, Auger and TEM were used for material characterization.