Author:
Shen Honglie,Zhou Zuyao,Xu Honglai,Xia Guanqun,Zou Shichang
Subject
Physics and Astronomy (miscellaneous)
Cited by
13 articles.
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1. Two-dimensional characterization of ion-implantation damage in GaN Schottky contacts using scanning internal photoemission microscopy;Japanese Journal of Applied Physics;2016-03-09
2. (Invited) A Brief Review of Doping Issues in III-V Semiconductors;ECS Transactions;2013-05-03
3. Bulk unipolar diodes formed in GaAs by ion implantation;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1999-01
4. Acceptor profile control in GaAs using co-implantation of Zn and P;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1999-01
5. Electrical and optical characterization of Cd+ and P+ dually ion-implanted GaAs;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1997-05