Influence of silicon wafer surface orientation on very thin oxide quality
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.358980
Reference21 articles.
1. Dependence of thin-oxide films quality on surface microroughness
2. Dependence of Surface Microroughness of CZ, FZ, and EPI Wafers on Wet Chemical Processing
3. Dependence of electron channel mobility on Si-SiO/sub 2/ interface microroughness
4. Characteristics of the Surface-State Charge (Qss) of Thermally Oxidized Silicon
5. Characterization of thin-oxide MNOS memory transistors
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