Damage free Ar ion plasma surface treatment on In0.53Ga0.47As-on-silicon metal-oxide-semiconductor device
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4935248
Reference21 articles.
1. Nanometre-scale electronics with III–V compound semiconductors
2. Synchrotron radiation photoemission spectroscopic study of band offsets and interface self-cleaning by atomic layer deposited HfO2 on In0.53Ga0.47As and In0.52Al0.48As
3. Surface passivation of III–V semiconductors for future CMOS devices—Past research, present status and key issues for future
4. Anomalous frequency dispersion of m.o.s. capacitors formed on n-type GaAs by anodic oxidation
5. Depletion-mode InGaAs metal-oxide-semiconductor field-effect transistor with oxide gate dielectric grown by atomic-layer deposition
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1. Performance of flexible In0.7Ga0.3As MOSFETs by utilizing liquid polyimide (LPI) transfer with effective mobility of 3,667 cm2/V-s;Solid-State Electronics;2023-08
2. The photoluminescence characteristics of GaAs surface by plasma treatment;Materials Science in Semiconductor Processing;2021-11
3. Effect of HCl cleaning on InSb–Al2O3 MOS capacitors;Semiconductor Science and Technology;2019-02-26
4. Penta-PdX2 (X = S, Se, Te) monolayers: promising anisotropic thermoelectric materials;Journal of Materials Chemistry A;2019
5. Effect of high-pressure deuterium annealing with high-κ stack onto In0.53Ga0.47As MOS capacitors on 300 mm Si substrate;Japanese Journal of Applied Physics;2018-09-28
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