Surfactant-mediated epitaxy of Ge on Si(111): Beyond the surface
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1882760
Reference21 articles.
1. Thin epitaxial Ge−Si(111) films: Study and control of morphology
2. Growth and characterization of GaAs/Ge epilayers grown on Si substrates by molecular beam epitaxy
3. Anomalous strain relaxation in SiGe thin films and superlattices
4. Surfactants in epitaxial growth
5. Microstructure and strain relief of Ge films grown layer by layer on Si(001)
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