Adsorption of sulfur on Si(111)-Reference-Cited by-同舟云学术

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Adsorption of sulfur on Si(111)

Published:2020-04 Issue: Volume:694 Page:121561
ISSN:0039-6028
Container-title:Surface Science
language:en
Short-container-title:Surface Science

Author:

Schmidt Th.,Buß L.,Ewert M.,Schönhoff G.,Wehling T.,Falta J.

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Reference50 articles.

1. SOI By CVD: epitaxial lateral overgrowth (ELO) process—review;Jastrzebski;J. Cryst. Growth,1983

2. Dislocation-free Ge nano-crystals via pattern independent selective Ge heteroepitaxy on Si nano-tip wafers;Niu;Sci. Rep.,2016

3. Surfactant coverage and epitaxy of Ge on Ga-terminated Si(111);Falta;Appl. Phys. Lett.,1993

4. Surfactants in epitaxial growth;Copel;Phys. Rev. Lett.,1989

5. The interplay of surface morphology and strain relief in surfactant mediated growth of Ge on Si(111);Horn-von Hoegen;Surf. Sci.,1993

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. S-doped crosslinked porous Si/SiO2 anode materials with excellent lithium storage performance synthesized via disproportionation;Ceramics International;2023-02

2. Dimensionality and bonding characters of Cu$$_2$$Si self-assembled on Si(111);Journal of the Korean Physical Society;2022-08-22

3. Adsorption of S on Si(111) with M4 × 4 superstructure;Surface Science;2020-11

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