Saturation of electrically activated Sb concentration in heavily Sb-doped n +-Ge1−x Sn x epitaxial layers
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
https://iopscience.iop.org/article/10.35848/1347-4065/ab867d/pdf
Reference30 articles.
1. Strain: A Solution for Higher Carrier Mobility in Nanoscale MOSFETs
2. Electronic band structure and effective mass parameters of Ge1-xSnx alloys
3. Direct gap photoluminescence of n-type tensile-strained Ge-on-Si
4. Electron mobility enhancement in strained-germanium n-channel metal-oxide-semiconductor field-effect transistors
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1. Ge1−Sn layers with x∼0.25 on InP(001) substrate grown by low-temperature molecular beam epitaxy reaching 70 °C and in-situ Sb doping;Materials Science in Semiconductor Processing;2024-06
2. Sn-incorporation effect on thermoelectric properties of Sb-doped Ge-rich Ge1−x−y Si x Sn y epitaxial layers grown on GaAs(001);Japanese Journal of Applied Physics;2022-07-15
3. Photoluminescence properties of heavily Sb doped Ge1−x Sn x and heterostructure design favorable for n+-Ge1−x Sn x active layer;Japanese Journal of Applied Physics;2021-12-15
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