Polarization-induced hole doping in N-polar III-nitride LED grown by metalorganic chemical vapor deposition-Reference-Cited by-同舟云学术

Polarization-induced hole doping in N-polar III-nitride LED grown by metalorganic chemical vapor deposition

Published:2018-04-30 Issue:18 Volume:112 Page:182104
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Yan Long¹,Zhang Yuantao¹,Han Xu¹,Deng Gaoqiang¹,Li Pengchong¹,Yu Ye¹,Chen Liang¹,Li Xiaohang²^ORCID,Song Junfeng¹

Affiliation:

1. State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Qianjin Street 2699, Changchun 130012, China

2. King Abdullah University of Science and Technology (KAUST), Advanced Semiconductor Laboratory, Thuwal 23955-6900, Saudi Arabia

Funder

National Key Research and Development Program

National Natural Science Foundation of China

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5023521

Reference13 articles.

1. Growth and design of deep-UV (240–290nm) light emitting diodes using AlGaN alloys

2. Demonstration of an ultraviolet 336 nm AlGaN multiple-quantum-well laser diode

3. Enhanced spectral response of an AlGaN-based solar-blind ultraviolet photodetector with Al nanoparticles

4. Optical and electrical properties of Mg-doped p-type AlxGa1−xN

5. Polarization-Induced Hole Doping in Wide–Band-Gap Uniaxial Semiconductor Heterostructures

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