Demonstration of Full AlGaN Tunnel Junction Ultraviolet LED-Reference-Cited by-同舟云学术

Demonstration of Full AlGaN Tunnel Junction Ultraviolet LED

Published:2024-04-12 Issue:5 Volume:11 Page:1866-1872
ISSN:2330-4022
Container-title:ACS Photonics
language:en
Short-container-title:ACS Photonics

Author:

Deng Gaoqiang¹,Yu Jiaqi¹,Niu Yunfei¹,Zhang Lidong¹,Ma Haotian¹,Wang Yusen¹,Zuo Changcai¹,Yang Shixu¹,Han Xu¹,Chen Liang¹,Zhang Baolin¹,Li Dabing²^ORCID,Zhang Yuantao¹^ORCID

Affiliation:

1. State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Qianjin Street 2699, Changchun 130012, China

2. State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China

Funder

National Key Research and Development Program of China

Jilin Provincial Scientific and Technological Development Program

National Natural Science Foundation of China

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acsphotonics.3c01784

Reference40 articles.

1. Hybrid functional investigations of band gaps and band alignments for AlN, GaN, InN, and InGaN

2. Deep‐Ultraviolet LEDs Incorporated with SiO ₂ ‐Based Microcavities Toward High‐Speed Ultraviolet Light Communication

3. Quantum Dots Integrated Deep-Ultraviolet Micro-LED Array Toward Solar-Blind and Visible Light Dual-Band Optical Communication

4. Enhanced light extraction of the deep-ultraviolet micro-LED via rational design of chip sidewall

5. High wall-plug efficiency blue III-nitride LEDs designed for low current density operation

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