Passivation of (NH4)2S‐treated GaAs surface with an As2S3film
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.108013
Reference8 articles.
1. Dramatic enhancement in the gain of a GaAs/AlGaAs heterostructure bipolar transistor by surface chemical passivation
2. Effects of Na2S and (NH4)2S edge passivation treatments on the dark current‐voltage characteristics of GaAspndiodes
3. As2S3/GaAs, a new amorphous/crystalline heterojunction for the III‐V semiconductors
4. Surface passivation effects of As2S3glass on self‐aligned AlGaAs/GaAs heterojunction bipolar transistors
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1. Liquid phase oxidation for InGaP/GaAs HBT passivation;Semiconductor Science and Technology;2006-07-11
2. Characterization of self-assembled monolayers of alkanethiol on GaAs surface by contact angle and angle-resolved XPS measurements;Surface Science;2003-04
3. Stable gallium arsenide MIS capacitors and MIS field effect transistors by (NH/sub 4/)/sub 2/S/sub x/ treatment and hydrogenation using plasma deposited silicon nitride gate insulator;IEEE Transactions on Electron Devices;2002-03
4. Combined effect of (NH4)2Sxtreatment and post-metallization annealing with plasma-enhanced chemical vapour deposition silicon nitride gate dielectric on the GaAs metal-insulator-semiconductor characteristics and the photoluminescence characteristics of GaAs substrates;Semiconductor Science and Technology;2002-02-18
5. SURFACE AND INTERFACIAL RECOMBINATION IN SEMICONDUCTORS;Handbook of Surfaces and Interfaces of Materials;2001
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