Combined effect of (NH4)2Sxtreatment and post-metallization annealing with plasma-enhanced chemical vapour deposition silicon nitride gate dielectric on the GaAs metal-insulator-semiconductor characteristics and the photoluminescence characteristics of GaAs substrates-Reference-Cited by-同舟云学术

Combined effect of (NH4)2Sxtreatment and post-metallization annealing with plasma-enhanced chemical vapour deposition silicon nitride gate dielectric on the GaAs metal-insulator-semiconductor characteristics and the photoluminescence characteristics of GaAs substrates

Published:2002-02-18 Issue:3 Volume:17 Page:243-248
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Remashan K,Bhat K N

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference35 articles.

1. Dramatic enhancement in the gain of a GaAs/AlGaAs heterostructure bipolar transistor by surface chemical passivation

2. Nearly ideal electronic properties of sulfide coated GaAs surfaces

3. Effects of Na2S and (NH4)2S edge passivation treatments on the dark current‐voltage characteristics of GaAspndiodes

4. Control of the GaAs/SiO2 interface through sulfur passivation and a photo-CVD process

5. The Effect of (NH4)2S Treatment on the Interface Characteristics of GaAs MIS Structures

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