Uniformity of 3‐in., semi‐insulating, vertical‐gradient‐freeze GaAs wafers
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.344458
Reference6 articles.
1. GaAs field‐effect transistor properties, as influenced by the local concentrations of midgap native donors and dislocations
2. A novel application of the vertical gradient freeze method to the growth of high quality III–V crystals
3. EL2 distributions in vertical gradient freeze GaAs crystals
4. Optical assessment of the main electron trap in bulk semi‐insulating GaAs
5. Growth and properties of large-diameter indium lattice-hardened GaAs crystals
Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Undoped GaAs grown by the vertical gradient freeze method: growth and properties;Materials Science and Engineering: B;1994-12
2. Quasi-steady-state heat transfer/thermal stress model for dislocation generation in the vertical gradient freeze growth of GaAs;Journal of Applied Physics;1993-04-15
3. Thermal stress theory of dislocation reduction in the vertical gradient freeze (VGF) growth of GaAs and InP;Journal of Crystal Growth;1993-03
4. A comparison of reducing the dislocation densities in GaAs grown by the vertical gradient freeze and liquid‐encapsulated Czochralski techniques;Journal of Applied Physics;1993-01
5. Chapter 3 Defects Relevant for Compensation in Semi-Insulating GaAs;Imperfections in III/V Materials;1993
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