Thermal stress theory of dislocation reduction in the vertical gradient freeze (VGF) growth of GaAs and InP
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference40 articles.
1. Gallium Arsenide Technology;Goronkin,1986
2. Gallium Arsenide Technology;Ferry,1985
3. Crystal growth progress in response to the needs for optical communications
4. Semi-insulating properties of Fe-doped InP
5. The dynamic gradient freeze growth of (Ti + Zn) doped semi-insulating InP
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4. Finite element modeling of dislocation reduction in GaAs and InP single crystals grown from the VGF process;Finite Elements in Analysis and Design;2006-11
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