A comparison of reducing the dislocation densities in GaAs grown by the vertical gradient freeze and liquid‐encapsulated Czochralski techniques
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.353825
Reference17 articles.
1. The theoretical and experimental fundamentals of decreasing dislocations in melt grown GaAs and InP
2. Dislocation Density and Sheet Resistance Variations Across Semi-Insulating GaAs Wafers
3. EL2 distributions in doped and undoped liquid encapsulated Czochralski GaAs
4. Inhomogeneity in Semi-Insulating GaAs Revealed by Scanning Leakage Current Measurements
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1. Transient electron transport in indium-doped semiinsulating GaAs;Journal of Applied Physics;2001-01
2. Effect of indium doping on transient transport phenomena in semi-insulating GaAs;Physical Review B;2000-10-15
3. Residual strain in annealed GaAs single-crystal wafers as determined by scanning infrared polariscopy, X-ray diffraction and topography;Journal of Crystal Growth;2000-03
4. Application of an axial magnetic field to vertical gradient freeze GaAs single crystal growth;Journal of Crystal Growth;1995-09
5. Photo-magneto-electric effect in semi-insulating GaAs : carrier lifetimes and influence of the defect structure;Applied Physics A: Materials Science & Processing;1995-05-01
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