Electron paramagnetic resonance determination of the generation rate of As antisites in fast neutron irradiated GaAs
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.332466
Reference10 articles.
1. Submillimeter EPR evidence for the As antisite defect in GaAs
2. ESR detection of antisite lattice defects in GaP, CdSiP2, and ZnGeP2
3. The observation of high concentrations of arsenic anti-site defects in electron irradiated n-type GaAs by X-band EPR
4. Electron spin resonance of AsGaantisite defects in fast neutron‐irradiated GaAs
5. Neutron-transmutation doping of GaAs — as studied by ESR
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1. Impact of radiation-induced point defects on thermal carrier decay processes in GaAs;Acta Materialia;2023-01
2. Observation of Ga antisite defect in electron‐irradiated semi‐insulating GaAs by photoluminescence;Applied Physics Letters;1992-08-17
3. Carrier removal and changes in electrical properties of neutron irradiated GaAs;Journal of Applied Physics;1991-11
4. The role of Ga antisite defect in the activation process of transmuted impurities in neutron‐transmutation‐doped semi‐insulating GaAs;Journal of Applied Physics;1990-07
5. Depth uniformity of electrical properties and doping limitation in neutron‐transmutation‐doped semi‐insulating GaAs;Journal of Applied Physics;1990-04
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