Neutron-transmutation doping of GaAs — as studied by ESR-Reference-Cited by-同舟云学术

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Neutron-transmutation doping of GaAs — as studied by ESR

Published:1982-10 Issue:2 Volume:44 Page:285-286
ISSN:0038-1098
Container-title:Solid State Communications
language:en
Short-container-title:Solid State Communications

Author:

Schneider J.,Kaufmann U.

Publisher

Elsevier BV

Subject

Materials Chemistry,Condensed Matter Physics,General Chemistry

Reference8 articles.

1. H. Herzer, Semiconductor Silicon 1977, Proc. 3rd Int. Symposium on Silicon Materials Science and Technology, p. 106.

2. Doping of semi‐insulating andn‐type GaAs by neutron transmutation

3. J.-E. Mueller (private communication).

4. Transmutation doping of GaAs by thermal neutrons

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1. Direct exchange interaction of localized spins associated with unpaired sp electrons in Be-doped low-temperature-grown GaAs layers;Journal of Applied Physics;2011-04

2. Introduction of metastable vacancy defects in electron-irradiated semi-insulating GaAs;Physical Review B;1995-05-15

3. Neutron transmutation doping of gallium arsenide;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1993-11

4. Chapter 2 EL2 Defect in GaAs;Imperfections in III/V Materials;1993

5. AsGaantisite defects in LT GaAs as studied by magnetic resonance and magneto-optical techniques;Semiconductor Science and Technology;1992-11-01

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