Observation of Ga antisite defect in electron‐irradiated semi‐insulating GaAs by photoluminescence
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.107763
Reference21 articles.
1. Simple Theoretical Estimates of the Enthalpy of Antistructure Pair Formation and Virtual‐Enthalpies of Isolated Antisite Defects in Zinc‐Blende and Wurtzite Type Semiconductors
2. Photoluminescence identification of ∼77‐meV deep acceptor in GaAs
3. Native defects in gallium arsenide
4. Residual double acceptors in bulk GaAs
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