Photoluminescence identification of ∼77‐meV deep acceptor in GaAs
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.330584
Reference11 articles.
1. Vacancy Association of Defects in Annealed GaAs
2. Evidence for Self-Activated Luminescence in GaAs: The Gallium Vacancy-Donor Center
3. Optical absorption and recombination radiation in semiconductors due to transitions between hydrogen-like acceptor impurity levels and the conduction band
4. A theory of edge-emission phenomena in CdS, ZnS and ZnO
5. Complexes due to donor‐acceptor‐type transitions in GaAs
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