Simplified closed‐form trap‐assisted tunneling model applied to nitrided oxide dielectric capacitors
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.351923
Reference17 articles.
1. Off-state gate current in n-channel MOSFETs with nitrided oxide gate dielectrics
2. Thermal Nitridation of Si and SiO/sub 2/ for VLSI
3. Thermal nitridation of silicon dioxide films
4. Charge-trapping properties of ultrathin nitrided oxides prepared by rapid thermal annealing
5. Optimization of low-pressure nitridation/reoxidation of SiO/sub 2/ for scaled MOS devices
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