Dynamic space-charge-controlled field emission model of current conduction in metal–insulator–semiconductor capacitors
Author:
Funder
Ministry of Education, Culture, Sports, Science and Technology
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5138729
Reference44 articles.
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Influence of Al2O3 atomic-layer deposition temperature on positive-bias instability of metal/Al2O3/β-Ga2O3 capacitors;Journal of Vacuum Science & Technology B;2024-01-01
2. Influence of gate material and diamond surface termination on current conduction in metal/Al2O3/diamond capacitors;Journal of Vacuum Science & Technology B;2024-01-01
3. Postdeposition annealing effect on atomic-layer-deposited Al2O3 gate insulator on (001) β-Ga2O3;Journal of Vacuum Science & Technology B;2021-12
4. Space-charge-controlled field emission analysis of current conduction in amorphous and crystallized atomic-layer-deposited Al2O3 on GaN;Journal of Applied Physics;2021-05-21
5. Postdeposition annealing effect on the reliability of atomic-layer-deposited Al2O3 films on GaN;Journal of Vacuum Science & Technology B;2020-11
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