Postdeposition annealing effect on the reliability of atomic-layer-deposited Al2O3 films on GaN

Author:

Horikawa Kiyotaka1ORCID,Okubo Satoshi1ORCID,Kawarada Hiroshi123ORCID,Hiraiwa Atsushi34ORCID

Affiliation:

1. Faculty of Science and Engineering, Waseda University, 3-4-1 Okubo, Shinjuku, Tokyo 169-8555, Japan

2. The Kagami Memorial Laboratory for Materials Science and Technology, Waseda University, 2-8-26 Nishiwaseda, Shinjuku, Tokyo 169-0051, Japan

3. Research Organization for Nano and Life Innovation, Waseda University, 513 Waseda-tsurumaki, Shinjuku, Tokyo 162-0041, Japan

4. Institute of Materials and Systems for Sustainability (Tokyo Branch), Nagoya University, Bldg. 120-5 (Waseda University), 513 Waseda-tsurumaki, Shinjuku, Tokyo 162-0041, Japan

Funder

Ministry of Education, Culture, Sports, Science and Technology

Publisher

American Vacuum Society

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Process Chemistry and Technology,Instrumentation,Electronic, Optical and Magnetic Materials

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