In vacuo measurements of dangling bonds created during Ar-diluted fluorocarbon plasma etching of silicon dioxide films
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1978982
Reference21 articles.
1. Study of the SiO2-to-Si3N4 etch selectivity mechanism in inductively coupled fluorocarbon plasmas and a comparison with the SiO2-to-Si mechanism
2. Dielectric film etching in semiconductor device manufacturing
3. Control of surface reactions in high-performance SiO[sub 2] etching
4. Investigation of ion transportation in high-aspect-ratio holes from fluorocarbon plasma for SiO2 etching
5. Etching yield of SiO2 irradiated by F+, CFx+ (x=1,2,3) ion with energies from 250 to 2000 eV
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