Characterization of electric-field enhancement leading to circuit-layout dependent damage of low-k films when exposed to processing plasma-Reference-Cited by-同舟云学术

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Characterization of electric-field enhancement leading to circuit-layout dependent damage of low-k films when exposed to processing plasma

Published:2019-08-28 Issue:8 Volume:126 Page:083304
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Ikeda Taro¹,Tanihara Akira¹,Yamamoto Nobuhiko¹,Eriguchi Koji²^ORCID

Affiliation:

1. Project Control Department, Tokyo Electron Technology Solutions Limited, 650 Mitsuzawa, Hosaka-cho, Nirasaki City, Yamanashi 407-0192, Japan

2. Graduate School of Engineering, Kyoto University, Kyoto-daigaku Katsura, Nishikyo-ku, Kyoto 615-8540, Japan

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5083937

Reference43 articles.

1. Low dielectric constant materials for microelectronics

2. Modeling and extraction of interconnect capacitances for multilayer VLSI circuits

3. Low-k dielectric materials

4. Materials chemistry for low-k materials

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Characterization techniques of ion bombardment damage on electronic devices during plasma processing—plasma process-induced damage;Japanese Journal of Applied Physics;2021-03-23

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