Hole mobility in the ultra-thin-body junctionless germanium-on-insulator p-channel metal-oxide-semiconductor field-effect transistors
Author:
Affiliation:
1. Laser Fusion Research Center, China Academy of Engineering Physics, Mianyang 621900, China
2. College of Information Science and Electronic Engineering, Zhejiang University, 38 Zheda Road, Hangzhou 310027, China
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5086890
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1. Maintaining the benefits of CMOS scaling when scaling bogs down
2. Ge based high performance nanoscale MOSFETs
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