A compensating point defect in carbon-doped GaN substrates studied with electron paramagnetic resonance spectroscopy-Reference-Cited by-同舟云学术

A compensating point defect in carbon-doped GaN substrates studied with electron paramagnetic resonance spectroscopy

Published:2018-04-28 Issue:16 Volume:123 Page:161547
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Willoughby W. R.¹,Zvanut M. E.¹,Paudel Subash¹,Iwinska M.²,Sochacki T.²,Bockowski M.²³

Affiliation:

1. Department of Physics, University of Alabama at Birmingham, Birmingham, Alabama 35294, USA

2. Institute of High Pressure Physics Polish Academy of Sciences, Sokolowska, 29/37, 01-142 Warsaw, Poland

3. Center for Integrated Research of Future Electronics, Institute of Materials and Systems for Sustainability, Nagoya University, C3-1 Furo-cho, Chikusa-su, Nagoya 464-8603, Japan

Funder

The National Centre for Research and Development (Poland)

National Science Foundation

DOD | United States Navy | Office of Naval Research

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/am-pdf/10.1063/1.5004411

Reference24 articles.

1. Dislocation Related Issues in the Degradation of GaN-Based Laser Diodes

2. Vertical Power p-n Diodes Based on Bulk GaN

3. Growth of High Crystalline Quality HVPE-GaN Crystals with Controlled Electrical Properties

4. Challenges and future perspectives in HVPE-GaN growth on ammonothermal GaN seeds

5. HVPE GaN wafers with improved crystalline and electrical properties

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2. Self-compensation of carbon in HVPE-GaN:C;Applied Physics Letters;2020-07-06

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4. Dual-color-sub-bandgap-light-excited isothermal capacitance transient spectroscopy for quick measurement of carbon-related hole trap density in n-type GaN;Japanese Journal of Applied Physics;2020-02-03

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