Self-compensation of carbon in HVPE-GaN:C
Author:
Affiliation:
1. Institute of High Pressure Physics, Polish Academy of Sciences, Sokolowska 29/37, 01-142 Warsaw, Poland
Funder
National Center of Science
Foundation for Polish Science
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/5.0012844
Reference19 articles.
1. Basic ammonothermal growth of Gallium Nitride – State of the art, challenges, perspectives
2. Promotion of lateral growth of GaN crystals on point seeds by extraction of substrates from melt in the Na-flux method
3. Challenges and future perspectives in HVPE-GaN growth on ammonothermal GaN seeds
4. Hydride-vapor-phase epitaxial growth of highly pure GaN layers with smooth as-grown surfaces on freestanding GaN substrates
5. Doping in bulk HVPE-GaN grown on native seeds – highly conductive and semi-insulating crystals
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