Promotion of lateral growth of GaN crystals on point seeds by extraction of substrates from melt in the Na-flux method-Reference-Cited by-同舟云学术

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Promotion of lateral growth of GaN crystals on point seeds by extraction of substrates from melt in the Na-flux method

Published:2019-03-27 Issue:4 Volume:12 Page:045508
ISSN:1882-0778
Container-title:Applied Physics Express
language:
Short-container-title:Appl. Phys. Express

Author:

Imanishi Masayuki,Murakami Kosuke,Yamada Takumi,Kakinouchi Keisuke,Nakamura Kosuke,Kitamura Tomoko,Okumura Kanako,Yoshimura Masashi,Mori Yusuke

Funder

Ministry of the Environment

Japan Science and Technology Agency

Publisher

IOP Publishing

Subject

General Physics and Astronomy,General Engineering

Link

http://iopscience.iop.org/article/10.7567/1882-0786/ab0db6/pdf

Reference23 articles.

1. Nobel Lecture: Growth of GaN on sapphire via low-temperature deposited buffer layer and realization of p -type GaN by Mg doping followed by low-energy electron beam irradiation

2. Prospects for LED lighting

3. Recent progress of GaN power devices for automotive applications

4. Vertical GaN p-n Junction Diodes With High Breakdown Voltages Over 4 kV

5. Fabrication of low-curvature 2 in. GaN wafers by Na-flux coalescence growth technique

Cited by 37 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Characteristics of Vertical Transistors on a GaN Substrate Fabricated via Na‐Flux Method and Enlargement of the Substrate Surpassing 6 Inches;physica status solidi (RRL) – Rapid Research Letters;2024-06-26

2. Analysis of GaN crystal growth mechanism in liquid-phase epitaxial Na-flux method;Journal of Materials Science;2024-04-12

3. Effects of Solution Height on the Growth of GaN Crystals in the Na-Flux Liquid-Phase Method;Crystal Growth & Design;2024-04-01

4. Vacancy‐Type Defects and Their Trapping/Detrapping of Charge Carriers in Ion‐Implanted GaN Studied by Positron Annihilation;physica status solidi (b);2024-02-29

5. Suppression of polycrystal nucleation by methane addition at moderate timing to maintain GaN crystal growth on point seeds in the Na-flux method;Journal of Crystal Growth;2024-02

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