A Deep Carbon‐Related Acceptor Identified through Photo‐Induced Electron Paramagnetic Resonance
Author:
Affiliation:
1. Department of PhysicsUniversity of Alabama at Birmingham Birmingham AL 35294 USA
2. Institute of High Pressure PhysicsPolish Academy of Sciences Sokolowska, 29/37 01-142 Warsaw Poland
Funder
National Science Foundation
National Center for Research and Development
Publisher
Wiley
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssb.201900593
Reference34 articles.
1. Depth dependence of defect density and stress in GaN grown on SiC
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3. Growth of High Crystalline Quality HVPE-GaN Crystals with Controlled Electrical Properties
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5. Highly uniform growth of 2-inch GaN wafers with a multi-wafer HVPE system
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