Depth dependence of defect density and stress in GaN grown on SiC
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2141651
Reference30 articles.
1. Large‐band‐gap SiC, III‐V nitride, and II‐VI ZnSe‐based semiconductor device technologies
2. III–nitrides: Growth, characterization, and properties
3. GaN: Processing, defects, and devices
4. Microstructure of GaN epitaxy on SiC using AlN buffer layers
5. High quality GaN grown on Si(111) by gas source molecular beam epitaxy with ammonia
Cited by 28 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Study of impurities diffusion in Al2O3/GaN/AlxGa1−xN hetero-structures;Journal of Materials Science: Materials in Electronics;2023-01-25
2. A Deep Carbon‐Related Acceptor Identified through Photo‐Induced Electron Paramagnetic Resonance;physica status solidi (b);2020-04
3. Raman investigation on the surface carrier concentration of single GaN microrod grown by MOCVD;Applied Surface Science;2019-09
4. Dislocation-induced stress in polycrystalline materials: mesoscopic simulations in the dislocation density formalism;Modelling and Simulation in Materials Science and Engineering;2018-03-29
5. Observation of the early stages of GaN thermal decomposition at 1200 °C under N 2;Materials Science and Engineering: B;2018-01
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3