Near edge x-ray absorption fine structure characterization of polycrystalline GaN grown by nitridation of GaAs (001)
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.370791
Reference15 articles.
1. Selective-area epitaxy of GaAs using a GaN mask in in-situ processes
2. Reactive N+2 ion bombardment of GaAs{110}: A method for GaN thin film growth
3. In situreflectance difference spectroscopy and reflection high-energy electron diffraction observation of nitridation processes on GaAs(001) surfaces
4. A study of the nitridation process on GaAs (001) surface by rf-N plasma irradiation
5. Nitridation of GaAs surfaces using nitrogen molecules cracked by a hot tungsten filament
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