NEXAFS and XPS study of GaN formation on ion-bombarded GaAs surfaces
Author:
Publisher
Elsevier BV
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation
Reference23 articles.
1. Synchrotron radiation photoemission spectroscopy studies of the thermal nitridation of GaAs(100) with ammonia
2. Near edge x-ray absorption fine structure characterization of polycrystalline GaN grown by nitridation of GaAs (001)
3. Interstitial nitrogen induced by low-energy ion beam nitridation of AIII–BV semiconductor surfaces
4. Reduction of band-gap energy in GaNAs and AlGaNAs synthesized by N+ implantation
5. Reactive N+2 ion bombardment of GaAs{110}: A method for GaN thin film growth
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