In situreflectance difference spectroscopy and reflection high-energy electron diffraction observation of nitridation processes on GaAs(001) surfaces
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.366209
Reference15 articles.
1. InxGa(1−x)N/InyGa(1−y)N superlattices grown on GaN films
2. Deposition of highly resistive, undoped, andp‐type, magnesium‐doped gallium nitride films by modified gas source molecular beam epitaxy
3. Surface reconstructions of zinc-blende GaN/GaAs(001) in plasma-assisted molecular-beam epitaxy
4. An investigation of the properties of cubic GaN grown on GaAs by plasma-assisted molecular-beam epitaxy
5. Selective growth of zinc‐blende, wurtzite, or a mixed phase of gallium nitride by molecular beam epitaxy
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