Nitrogen–arsenic exchange processes and investigation of the nitrided GaAs surfaces in MOVPE
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference13 articles.
1. Nitrogen incorporation in (GaIn)(NAs) for 1.3μm VCSEL grown with MOVPE
2. Nitridation processes on GaAs(001) surfaces: Optical, structural, and chemical analysis
3. Surface reconstruction of GaAs() nitrided under the controlled As partial pressure
4. Study of the pyrolysis of tertiarybutylhydrazine and GaN film growth
5. Low-Temperature Metalorganic Vapor Phase Epitaxy (MOVPE) of GaN using Tertiarybutylhydrazine
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1. Influence of UDMHy on GaAs (0 0 1) surface reconstruction before and during growth of Ga(NAs) by MOVPE;Applied Surface Science;2018-11
2. Self-Induced Nucleation Growth of GaN Columns by Chemical Vapor Deposition;physica status solidi (a);2018-02-14
3. A rapid reflectance-difference spectrometer for real-time semiconductor growth monitoring with sub-second time resolution;Review of Scientific Instruments;2012-10
4. Metalorganic chemical vapor deposition of InGaAsN using dilute nitrogen trifluoride;Journal of Crystal Growth;2007-02
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