A rapid reflectance-difference spectrometer for real-time semiconductor growth monitoring with sub-second time resolution-Reference-Cited by-同舟云学术

A rapid reflectance-difference spectrometer for real-time semiconductor growth monitoring with sub-second time resolution

Published:2012-10 Issue:10 Volume:83 Page:103109
ISSN:0034-6748
Container-title:Review of Scientific Instruments
language:en
Short-container-title:Review of Scientific Instruments

Author:

Núñez-Olvera O.,Balderas-Navarro R. E.,Ortega-Gallegos J.,Guevara-Macías L. E.,Armenta-Franco A.,Lastras-Montaño M. A.,Lastras-Martínez L. F.,Lastras-Martínez A.

Publisher

AIP Publishing

Subject

Instrumentation

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4760252

Reference19 articles.

1. Anisotropies in the Above—Band-Gap Optical Spectra of Cubic Semiconductors

2. Above-bandgap optical anisotropies in cubic semiconductors: A visible–near ultraviolet probe of surfaces

3. Aspects of reflectance anisotropy spectroscopy from semiconductor surfaces

4. Reflection anisotropy spectroscopy

5. Stress-induced optical anisotropies measured by modulated reflectance

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4. Characterization of Si3N4/Si(111) thin films by reflectance difference spectroscopy;Japanese Journal of Applied Physics;2015-01-14

5. Real-time reflectance-difference spectroscopy of GaAs molecular beam epitaxy homoepitaxial growth;APL Materials;2014-03