Real-time reflectance-difference spectroscopy of GaAs molecular beam epitaxy homoepitaxial growth-Reference-Cited by-同舟云学术

Real-time reflectance-difference spectroscopy of GaAs molecular beam epitaxy homoepitaxial growth

Published:2014-03 Issue:3 Volume:2 Page:032107
ISSN:2166-532X
Container-title:APL Materials
language:en
Short-container-title:APL Materials

Author:

Lastras-Martínez A.,Ortega-Gallegos J.,Guevara-Macías L. E.,Nuñez-Olvera O.,Balderas-Navarro R. E.,Lastras-Martínez L. F.,Lastras-Montaño L. A.,Lastras-Montaño M. A.

Publisher

AIP Publishing

Subject

General Engineering,General Materials Science

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4868519

Reference30 articles.

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4. Photoinduced formation of dimers at a liquid/(001)GaAs interface

5. Effect of reconstruction-induced strain on the reflectance difference spectroscopy of GaAs (001) aroundE1andE1+Δ1transitions

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